Multimode silicon photonics is attracting more and more attention because the introduction of higher-order modes makes it possible to increase the channel-number for data-transmission in mode-division-multiplexed (MDM) systems as well as improve the flexibility of device designs. On the other hand, the design of multimode silicon photonic devices becomes very different compared with the traditional case with the fundamental mode only. Great progresses have been achieved on multimode silicon photonics in the past years. In this tutorial talk, a review is given for recent progresses of multimode silicon photonic devices and circuits. The first part is multimode silicon photonics for MDM systems, including on-chip multi-channel mode (de)multiplexers, multimode waveguide bends, multimode waveguide crossings, reconfigurable multimode silicon photonic integrated circuits, multimode chip-fiber couplers, etc. In the second part, we give a discussion about the higher-order-mode-assisted silicon photonic devices, including on-chip polarization-handling devices with higher-order modes, add-drop optical filters based on multimode Bragg gratings, and some emerging applications.

Daoxin Dai received the B.Eng. degree from the Department of Optical Engineering, Zhejiang University (ZJU), Hangzhou, China, and the Ph.D. degree from the Royal Institute of Technology, Stockholm, Sweden, in 2000 and 2005, respectively. He joined ZJU as an Assistant Professor in 2005 and became an Associate Professor in 2007, and a Full Professor in 2011. He visited the Chinese University of Hong Kong in 2005, and Inha University, South Korea, in 2007. He was with the University of California, Santa Barbara, USA, as a Visiting Scholar in the years of 2008-2011. Currently he is the QIUSHI Distinguished Professor at ZJU and is leading the Silicon Integrated Nanophotonics Group. He has published >180 refereed international journal papers in Nature, Nature Comm., Light Sci. Appl., Laser Photon. Rev., Optica, etc. Dr. Dai is one of Most Cited Chinese Researchers in 2015-2019 (Elsevier). He has given >70 keynote/invited talks and served as the TPC Chair/Member for prestigious international conferences (e.g., OFC). He is also serving as the Associate Editor of the Journals of IEEE Photonics Technology Letters, Photonics Research, and Optical and Quantum Electronics. He also served as the Guest Editor of special issues of IEEE JSTQE (2018) and IEEE JLT (2019).

We discuss silicon photonic devices for optical signal processing in different physical dimensions. In wavelength domain, we will talk about optical filtering and switching, including a suspended nanobeam filter with a high tuning efficiency of 21 nm/mW, and a 2 x 2 nanobeam optical switch with a 0.16-mW tuning power. For polarization handling, we show a 30-dB high extinction-ratio silicon PBS, and an ultra-compact PSR with an 8.77-μm coupling length. In mode processing, we demonstrate a 11-channel mode multiplexer with insertion losses < 2.6 dB and crosstalk values < -15.4 dB at 1545 nm.

Yikai Su received the Ph.D. degree in EE from Northwestern University, Evanston, IL, USA in 2001. He worked at Crawford Hill Laboratory of Bell Laboratories and he joined the Shanghai Jiao Tong University as a Full Professor in 2004. His research areas cover silicon photonic devices for information transmission and switching. He has over 400 publications in international journals and conferences, with more than 4000 citations (scopus search). He holds 6 US patents and ~50 Chinese patents. Prof. Su served as an associate editor of APL Photonics (2016- ) and Photonics Research (2013-2019), a topical editor of Optics Letters (2008-2014), and a guest editor of IEEE JSTQE (2008/2011). He is the chair of IEEE Photonics Society Shanghai chapter, a general co-chair of ACP 2012, a TPC co-chair of ACP 2011 and APCC 2009. He also served as a TPC member of a large number of international conferences including CLEO (2016-2018), ECOC (2013-2017), OFC (2011-2013, 2020- ), OECC 2008, CLEO-PR 2007, and LEOS (2005-2007).

Silicon photonics is currently at the same early stage of development as microelectronics was in the 1970s. The designers must own some basic understanding of fabrication and packaging at the very beginning of scheme. The most attractive aspects of photonics on silicon are the low primary cost of the material, the mature processing techniques, and the potential for straightforward integration with electrical components in the same substrate. Even silicon photonics is always claimed to be CMOS compatible, every attempt to directly integrate photonic functionality into the advanced CMOS line so far, without making any process changes, has yielded poorly-performing devices or economic waste. As more and more players entered this field, research and development (R&D) foundries are beginning to play bigger roles in transforming silicon photonics into a mature technology for mass production. R&D foundry services such as multi-project wafer (MPW), customized process developmental runs and small volume manufacturing are discussed. The differences between Silicon Photonics process and CMOS and the development of commercial foundries are presented.

Junbo Feng received the B.E. and Ph.D. degrees from Huazhong University of Science and Technology, respectively. He studied in the electronic engineering department of Georgia Tech. during 2007.01~2008.06. After that, he continued his research in Peking University and Tsinghua University until 2011. He is now the director of silicon photonics department of Chongqing United Micro-Electronics Center. His research topics focus on silicon photonics and optical integration technologies. He has authored more than 30 journal and conference publications and a book chapter, owned more than 20 patents.

Microring resonators, as a fundamental building block of photonic integrated circuits, have been well developed into numerous functional devices, whose performances are strongly determined by microring's resonance lineshapes. In this talk, we propose tow compact structures to reliably realize Lorentzian, Fano, and electromagnetically induced transparency (EIT) resonance lineshapes in a microring resonator. In the first structure, by simply inserting two air-holes in the side-coupled waveguide of a microring, a Fabry-Perot (FP) resonance is involved to couple with microring's resonant modes, showing Lorentzian, Fano, and EIT lineshapes over one free spectral range of the FP resonance. The quality factors, extinction ratios, and slope rates in different lineshapes are discussed. At microring's specific resonant wavelength, the lineshape could be tuned among these three types by controlling the FP cavity's length. Experiment results verify the theoretical analysis well and represent Fano lineshapes with extinction ratios of about 20 dB and slope rates over 280 dB/nm. In the second structure, a single air-hole is inserted into the bus-waveguide coupled with a microring, which functions as an inline MZI. Fano resonance lineshapes are obtained at each resonant wavelengths. The obtained slope rate and extinction ratio of the Fano resonant lineshapes are 22.2 dB and 557.33 dB/nm, respectively. The reliably and flexibly tunable lineshapes in the compact structure have potentials to improve microring-based devices and expand their application scopes.

Xuetao Gan received the B.S. and Ph.D. degrees from Northwestern Polytechnical University, Xi'an, China, in 2007 and 2013, respectively. From 2010 to 2012, he was a visiting scholar at Columbia University, New York, USA. He is currently a professor of applied physics in Northwestern Polytechnical University. His research interests mainly include nanophotonics, optoelectronics in graphene and other layered materials, and applications of photonic crystals. As the first-author and corresponding author, has published more than 20 papers, including Nature Photonics, Nano Letters, ACS Photonics, Laser Photonics Reviews, Advanced Optical Materials, Optica.

Mode-division multiplexing is a promising and cost-effective way to increase the communication capability of integrated photonic circuits, for both classical and quantum information processing. To construct large-scale on-chip multimode routing systems, the multimode waveguide bending, multimode waveguide crossing and multimode taper are the key components. However, these components can hardly be designed by traditional methods, which severely limits the density and capacity of multimode routing systems. Here we demonstrate the design of the above mentioned multimode functional devices based on transformation optics, which can handle, in principle, any number of waveguide modes and large bandwidth as well. The multimode waveguide bending and multimode taper are coordinately transformed from straight multimode waveguides. And a Maxwell’s fisheye is transformed to construct the multimode waveguide star crossing. A gray-scale electron-beam lithography is adopted to fabricate the multimode waveguide star crossing on a commercial silicon-on-insulator wafer. The proposed multimode waveguide star crossing has low loss and low crosstalk throughout an ultra-broad wavelength range of ∼400  nm. Our study paves the way for realizing highly integrated and large capacity on-chip multimode routing and communication systems.

Dr. Dingshan Gao received his doctorate from Institute of Semiconductors, Chinese Academy of Sciences in 2004. After that, he worked as a postdoctoral researcher in Huazhong University of Science and Technology. Now he is an associate professor at Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology. He is currently the Chinese chairman of the Sino-French “PHOTONET” joint research network. His research interests include silicon photonics, nano-optics and quantum optics. He has published more than 50 papers in Optica, Scientific Reports, Optics Letters, Optics Express and other international journals. He is an associate editor of the international journal IET Optoelectronics.

High coherence semiconductor lasers are highly needed for coherent communications, on-chip atomic clocks and sensors related activities like in frequency modulated continuous wave LIDAR. As silicon waveguides are low loss, the silicon photonics platform is particularly well adapted for manufacturing such lasers. In this presentation, I will discuss about a novel type of hybrid III-V on silicon semiconductor laser based on a high quality factor. The cross section of the hybrid laser structure combines a silicon photonic layer to a quantum well gain material. The geometry is optimized such that the mode is buried into a rib silicon waveguide with a shallow grating of 30 nm deep teeth. The width of the grating is tapered longitudinally to create an effective confining potential which allows a single, bell-shaped longitudinal mode within the stop band of the distributed feedback laser. In particular, I will show that a very large quality factor, typically in the 106 range can be achieved, which corresponds to a very long photon lifetime (>> 1ns). Such a large photon lifetime transforms into a flat intensity noise characteristics with a level below -147 dB/Hz. Last but not the least, I will show that this high coherence hybrid laser exhibits a very narrow spectral line below 30 kHz as well as a remarkable robustness against external optical feedback. In the latter, 10 Gbps floor-free transmissions under optical feedback are demonstrated thereby paving the way to isolator-free photonics integrated circuits.

Frédéric Grillot received the Ph.D. degree from the University of Besançon (France) and the Thesis Habilitation in Physics from the University of Paris VII (France). He is currently a Full Professor at Télécom ParisTech (France) and at the University of New-Mexico (USA). His current research interests include advanced quantum confined devices using new materials such as quantum dots, light emitters based on intersubband transitions, nonlinear dynamics and optical chaos in semiconductor lasers and silicon photonics applications. Dr. Grillot has coauthored 93 journal papers and more than 200 contributions in international conferences and workshops. He is an Associate Editor for Optics Express (OSA), a Fellow Member of the SPIE and a Senior Member of the IEEE Photonics Society

The energy required to transmit information by optical data bits within and between electronic and photonic integrated circuits, data centers, and ultimately across the earth from one point to another one must be minimized. This energy spans from typically tens of picojoules-per-bit to well over tens of millijoules-per-bit for intercontinental distances. Given the large number and high density of optical interconnects in data centers, they belong to the dominant energy consumers in the world-wide power grid. Most energy in a data center is consumed by optical transmitters based on VCSELs up to distances of several hundred m. The data rate across these interconnects must be increased and at the same time their energy consumption decreased, obviously contradictory demands. Our novel photon lifetime tuning technology for VCSELs allows to increase their max bit rate and to reduce their power consumption, in particular at large bit rates. Wavelength division multiplexing in combination with optimized VCSELs allows to develop optimization strategies presented here for +200 Gb/s data links.

Gunter Larisch received the physics Diploma degree in applied physics from the Technische Universität Berlin, Germany, in 2011 and a Ph.D. in science in 2017. He continued working as Postdoctoral Researcher at Technische Universität Berlin, Germany. Currently he is Associate Professor at the “Bimberg Chinese-German Center for Green Photonics” at Chinese Academy of Sciences and head of its High Frequency Lab.

Energy efficient and compact III-V light sources directly grown on (001) Si substrates are desirable for silicon photonics. Scaling the laser footprint to nanometer scale improves the integration density and reduces power consumption of Si-based photonic integrated circuits, and opens up numerous new applications. In this talk, we report monolithically integrated in-plane InP/InGaAs nano-laser array on (001) silicon-on-insulator (SOI) platforms with emission wavelengths covering the entire C-band (1.55 µm). Multiple InGaAs quantum wells were embedded in high-quality InP nano-ridges by selective-area growth on patterned (001) SOI. Combined with air-surrounded InP/Si optical cavities, room-temperature operation at multiple telecom bands is obtained by defining different cavity lengths with lithography. The demonstration of telecom-wavelength monolithic nano-lasers on (001) SOI platforms presents an important step towards fully integrated Si photonics circuits.

Professor Kei May Lau is the Fang Professor of Engineering at the Hong Kong University of Science and Technology (HKUST). She received the B.S. and M.S. degrees in physics from the University of Minnesota, Minneapolis, and the Ph.D. degree in Electrical Engineering from Rice University, Houston, Texas. She was on the ECE faculty at the University of Massachusetts/Amherst and initiated MOCVD, compound semiconductor materials and devices programs. Since the fall of 2000, she has been with the ECE Department at HKUST. She established the Photonics Technology Center for R&D effort in III-V materials, optoelectronic, high power, and high-speed devices. Professor Lau is a Fellow of the IEEE (2001), a recipient of the US National Science Foundation (NSF) Faculty Awards for Women (FAW) Scientists and Engineers (1991), Croucher Senior Research Fellowship (2008), and the IEEE Photonics Society Aron Kressel Award (2017). She is an Editor of the IEEE EDL and former Associate Editor of IEEE TED, Applied Physics Letters and Journal of Crystal Growth.

With explosive developments of the cloud service and mobile computing, datacenter interconnects demand for higher throughput, evolving from 100Gb/s to 400Gb/s. The optical link outperforms copper on low transmission loss and low power consumption, which enables higher density integration for the data-rate at 400Gb/s and above. Modulated in PAM4, the data-rate in each channel is expected to be 56Gb/s at the first step, while eventually reaches 100Gb/s.
This talk focuses on the design and demonstration of driver circuits under PAM4 modulation, including a 50Gb/s direct-modulated VCSEL driver with the proposed asymmetric pulsed pre-emphasis, and a 50Gb/s Silicon-Photonics MZ modulator driver with optical-domain PAM4 combination.

Nan Qi received the B.S. from Beijing Institute of Technology in 2005, M.S. and Ph.D. degree from the Institute of Microelectronics, Tsinghua University in 2008 and 2013 respectively.
From 2013 to 2015, he worked as a post-doc research scholar in the department of EECS, Oregon State University, Corvallis, OR. From 2015 to 2017, he was with Hewlett-Packard Labs, Palo Alto, CA, as a post-doc and senior circuit-design engineer. In 2017, he joined the Institute of Semiconductors, Chinese Academy of Sciences, as a full professor working on the high-speed Electronic-Photonic Integrated Circuits (EPICs).
His research interests include the design of analog/RF circuits and systems, as well as the high-speed electronic/photonic integrated transceivers.

Characterization of the state of polarization (SoP) of light is crucial for many applications in domains such as astronomy, chemical analysis, quantum information, and optical communications. Bulky and costly discrete optical components used in conventional polarimeters limit their broad adoption. This talk reviews our recent progress on chip-scale full-Stokes polarimeters in silicon photonic integrated circuits. We discuss their optimization in presence of Gaussian and Poisson noises. Avoiding the use of free-space optical and mechanical components, this solid-state solution enables significant improvement in system robustness, size and cost.

Wei Shi is an Associate Professor in the Department of Electrical and Computer Engineering, Université Laval, Québec, QC, Canada. He received the Ph.D. degree in electrical and computer engineering from the University of British Columbia, Vancouver, BC, Canada, in 2012, where he was awarded the BCIC Innovation Scholarship for a collaboration entrepreneurship initiative. Before joining Université Laval in 2013, he was a researcher at McGill University, Montreal, QC, Canada, where he held a Postdoctoral Fellowship from the Natural Sciences and Engineering Research Council of Canada (NSERC). His current research focuses on integrated photonic devices and systems, involving silicon photonics, nanophotonics, CMOS-photonics co-design, high-speed optical communications, chip-scale lasers, and optical sensors. He holds a Canada Research Chair in Silicon Photonics.

Twisted light having helical phase front carries orbital angular momentum (OAM). The distinct features of OAM-carrying twisted light have given rise to many developments in manipulation, trapping, tweezer, microscopy, imaging, metrology, sensing, nonlinear interactions, astronomy, quantum information processing and optical communications. For all these twisted light enabled applications, the generation of twisted light is of great importance. Twisting light by photonic integrated devices is promising. Silicon photonics is one of the most promising photonic integration platforms owing to its high-index contrast, small footprint, low power consumption, and availability of complementary metal-oxide- semiconductor (CMOS) fabrication technology for low-cost mass production. In this talk, we will report recent progress in twisting light on silicon platform. After a brief introduction of basic concept of twisted light and well-established techniques and devices twisting light, we will focus on twisting light using silicon photonic integrated devices. Twisting light using dielectric metasurfaces on silicon platform, generating and synthesizing twisted light using compact silicon chip, generating broadband polarization diversity twisted light using sub-wavelength surface structure (superposed holographic fork gratings) on silicon platform are demonstrated in the experiment, showing favorable performance.

Jian Wang received the Ph.D. degree from Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, China, in 2008. He worked as a Postdoctoral Research Associate in Optical Communications Laboratory, University of Southern California, USA, from 2009 to 2011. He is currently a professor at Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, China. His research interests include optical communications, silicon photonics, and photonic integration. He has more than 300 publications on Science, Nature Photonics, Science Advances, Light: Science and Applications, Optica, Laser & Photonics Reviews, etc. He is a topical editor of Optics Letters and Chinese Optics Letters.

In the process of information technology, as Moore's law becomes more and more close to the limit, it has become inevitable and the consensus to combine microelectronics and optoelectronics to develop silicon-based large-scale optoelectronic integration technology. As the most important part of silicon photonic devices, silicon-based light source still attracted great efforts. In the traditional research, the erbium-doped materials have played an important role in silicon-based light sources. Recent studies demonstrated that the erbium silicate compound had a high net gain attributable to its high erbium concentration that has no insolubility problem. This paper focuses on the theory, designs, simulations, preparation methods, process and device optimizations of the erbium silicate compound optical waveguide amplifier and laser. The erbium silicate compound materials with large optical gains can serve as potential candidates for future silicon-based scale-integrated light-source applications.

Xingjun Wang received the B.E., M.E. and Ph.D. degrees from the Dalian University of Technology, China in 1999, 2002 and 2005, respectively. From 2007 to 2009, he was a JSPS postdoctoral follow in Department of Electronic Engineering, University of Electro-Communications, Japan. In 2009, he joined Peking University, and is currently a full professor at Peking University, Beijing, China. In 2015, he was selected first Young Yangtse River Scholar of China. Now he is devoted into Si photonics, including the Si based light source and Si optoelectronic integration chip for high speed optical communication. He has published more than 150 papers on international journals and conference proceedings. The 80 papers have been SCI indexed. The citation reaches 800 times.

The interaction between light and phonons is strongly enhanced in micro and nanoscale optical cavities and waveguides. Such enhanced interaction enabled a range of novel functionalities based on sound-light interaction, such as generating radio-frequency signals, suppressing stimulated light scattering and probing mesoscopic phonon modes. In this talk I will review our recent progress in this field that relies on exploring dielectric nano-waveguides and cavities to enhance or suppress the interaction between light and mechanical waves. These techniques have recently enabled probing in real-time the molecular-scale vibrational modes of carbon nanotubes.

Gustavo Wiederhecker is an associate professor with the Applied Physics Department in the University of Campinas, which he joined in 2011. His area of research embraces several aspects of nanophotonics, including the interaction between optical and mechanical waves and Kerr-based nonlinearities in nano-waveguides and microcavities. Wiederhecker obtained his PhD in 2008 at the University of Campinas in Brazil followed by a post-doctoral fellowship at Cornell University with Prof. Michal Lipson. He is a member of Optical Society of America and affiliate member of the Brazilian Academy of Sciences.

With the development of advanced nano-manufacturing methods, the manipulation of photons down to the nanoscale in silicon integrated optical chips has become a feasible and promising solution for next-generation data processing as electronic chips reach their fundamental limit. As the most important active devices that generate photons for all other working photonic components, silicon lasers are the last barrier to achieving silicon integrated optical chips. Although optical gain in silicon nanocrystals (Si-NCs) was observed in 2000, the progress in realizing all-Si lasers has been very limited due to the inferior optical gain compared to traditional gain materials. In this work, highly luminescent thin films of Si-NCs with a photoluminescence quantum yield (PLQY) of 57% were developed. The broadband photoluminescence (PL) covered the wavelength range from 650 nm to 900 nm, and wide-range optical gains were identified, indicating the feasibility of a tunable laser. Distributed feedback (DFB) all-Si lasers were fabricated using these thin films and pumped by femtosecond pulses at a wavelength of 400 nm. Characteristic lasing behaviors, including threshold effects, significant narrowing of spectral widths, polarization effects, laser spots and speckle patterns of lasing, were observed. In addition, three different DFB grating periods were selected, and the lasing peak could be tuned by over 100 nm. The lasing thresholds ranged from 1.0 to 6.4 mW/cm2. The linewidths of lasing peaks are less than 2 nm. This work demonstrates the lasing and wavelength tunability of all-Si DFB lasers based on highly luminescent Si-NC thin films with broadband optical gains.

Xiang Wu received his Ph.D. degree in optical engineering at Zhejiang University in 2004. He worked as a postdoc in Fudan University from 2004 to 2007 and appointed lecturer in 2007. He became an associate professor in 2010 and a professor in 2014. He was a visiting scholar in Hamamatsu Inc. in Japan from 2001 to 2002, in University of Missouri Columbia in 2009, and University of Michigan, Ann Arbor from 2013 to 2014. His research fields include biomedical photonics and silicon photonics.

Silicon light source is one of the most important electronic components in monolithic integration of silicon optoelectronics. Research on all-silicon optoelectronic devices and integration technology has been implemented, achievements are represented by two creative points: 1) electro-optic modulation method: achieving the frequency of 45 GHz under reverse current to avalanching, applied by the US in MOSFET devices and by the UK in TFT devices. 2) silicon light-emitting device's structures: improving the electric field distribution, realizing extra carrier injection, and then increasing the photon emission intensity (up to 200 nW/um^2), applied by the TSMC in SPAD. Such a chip-based silicon light-emitting device will be a key component for silicon-photonic-integrated circuits for future computing I/O applications.

Kaikai Xu received the Ph.D. degree from the University of California, Irvine CA. Currently, he is the Professor and Doctoral Supervision (with the title of the "UESTC 100 Talent Plan" Distinguished Professor) in the University of Electronic Science and Technology of China (UESTC), Chengdu, China, also a distinguished researcher scientist affiliated with the State Key Laboratory of Electronic Thin Films and Integrated Devices in the same university.
His research interest includes semiconductor optoelectronic device and its integration technologies. Related works are published on IEEE Journals, with more than 30 of them are published as the first author, including two as ESI Hot Papers (TOP 0.1%), two ESI Highly Cited Papers (TOP 1%), one selected as "Back Cover" by the Wiley, one highlighted by Institute of Physics as "IOP Select" in 2018, one listed by SPIE as one of "TOP TEN DOWNLOADS" (one of five non open-access articles) in April 2018, one listed by OSA as one of "TOP TEN DOWNLOADS" in November 2017. One published in J. Applied Physics (JAP) in March 2013 was among the TOP 25% most download, name as "JAP Outstanding Author".
Prof. Xu has served on the editorial board for several peer-review journals: establishing Journal of Physics Communications, guest-editing the OSA Applied Optics feature issue "Near- to mid-IR (1-13μm) III-V semiconductor lasers" and IEEE Transactions on Electron Devices special issue "Compact Modeling for Circuit Design";, is the associate editor for IET Electronics Letters, serving on Journal of Applied Physics Editorial Advisory Board, IEEE Senior Member, Chair of IEEE Nanotechnology Council Nano-Optics, Nano-Photonics, and Nano-Optoelectronics Committee, Member of IEEE Reliability Standards Working Groups.

Chromatic dispersion is one of fundamental properties of optical waveguides, and dispersion engineering has been extensively studied in the past years. Integrated waveguides with a high index contrast have suffered from strong waveguide dispersion which may be stronger than that in optical fibers by more than hundred times. Dispersion engineering is thus of great interest in integrated photonics community for optical communications, signal processing and broadband nonlinear applications. In this talk, we will review some recent advances in dispersion engineering mainly focusing on dispersion flattening for a flat and low dispersion over a broad spectral band. We will specifically talk about the possibility of producing extremely low dispersion over a bandwidth more than one octave, with five or six zero-dispersion wavelengths, and dispersion flattening with the limited number of design freedoms particularly for friendly device fabrication. A roadmap of dispersion flattening technology in the future will be discussed as well. It will also be reviewed how to use the obtained flat dispersion for broadband supercontinuum and frequency comb generation on a chip, both exhibiting an octave-spanning spectral coverage.

Lin Zhang received his B.S. and M.S. degrees with honors from Tsinghua University, China, in 2001 and 2004, respectively. He received the Ph.D. degree from University of Southern California, USA, in 2011. Then, he worked as a post-doc researcher at Massachusetts Institute of Technology, USA. Since 2015, he is a professor at Tianjin University in China. His research interests include integrated nano-photonics, on-chip nonlinear ultrafast phenomena, micro-resonator devices and system applications, chip-scale optical interconnects, sensing, and photonic crystal fibers. He has published over 240 peer-reviewed journal articles and conference papers, including 25 invited papers, and 2 book chapters. He has 7 patents issued. His H-index is 32.
He is a senior member of the Optical Society of America (OSA) and a member of the IEEE Photonics Society and the International Society for Optical Engineering (SPIE). Prof. Zhang received the Tianjin "Youth 1000-Talent" award in 2014 and the national "Youth 1000-Talent" award and "Peiyang Scholar - Outstanding Talent Oversea" award in 2015.

This talk will present a high-resolution and miniature multi-wavelength FBG interrogator based on a thermally tunable microring resonator (MRR) array. A phase detection method using dithering signals is exploited to generate an antisymmetric error signal curve, which is utilized for the feedback locking of the MRR with the FBG sensor. Dynamic strain sensing of both single FBG and multiple FBGs are experimentally demonstrated, with a dynamic strain resolution of 30 nε/√Hz over 100 Hz to 1 kHz. The proposed interrogator shows the great improvements in both resolution and wavelength accuracy compared with the reported MRR-based interrogators, and is promising for scalable multiplexed sensing applications.

Dr. Wenjia Zhang, associate professor with Shanghai Jiao Tong University, received the B.S. and Ph.D. degrees from Beijing University of Posts and Telecommunications in 2007 and 2012 respectively. He visited the Lightwave Research Laboratory, Columbia University, from Sep. 2010 to Mar. 2012, working on optical interconnected high-performance data center. After graduation, he joined Singapore-MIT Alliance for Research and Technology (SMART) as a postdoc researcher from Aug. 2012 to Jun. 2014, leading a project of optical network-on-chip based on the III-V over Si platform. From Jun. 2014 to Dec. 2015, he was a senior optical engineer with Finisar Shanghai, where he worked on the 40G/100G module design for the next-generation active optical cable. After that, he joined Shanghai Jiao Tong University and his research topics cover integrated optical systems for the high-performance optical interconnects and sensing.