2D semiconductors for future computing

Xinran Wang

Nanjing University

Suzhou Laboratory

Abstract: 2D transition-metal dichalcogenide semiconductors are promising candidates in future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. In this talk, I will present our recent advances in this area. The main topics include wafer-scale single-crystal materials growth, high-performance transistor technology such as Ohmic contact and air-gap design and architecture-level innovations toward neuromorphic computing. These advances demonstrate the potential of 2D semiconductors in future computing beyond silicon.

References:

Nat. Nanotech., 16, 1201 (2021).

Nat. Nanotech., 16, 1231 (2021).

Nature 605, 69 (2022).

Nature 613, 274 (2023).

Nat. Nanotech., DOI: 10.1038/s41565-023-01343-0 (2023).

Chem. Soc. Rev., 52, 1650 (2023). 

Nat. Electron., accepted (2023). 

Biography: Professor Wang received his B.S. degree in physics from Nanjing University in 2004 and Ph.D. degree in physics from Stanford University in 2010. Between 2010 and 2011, he was a postdoctoral researcher at Stanford University and then at University of Illinois at Urbana-Champaign. He then joined the faculty of Nanjing University where he is currently a full professor and chair of the School of Integrated Circuits. He also serves as the director of Frontier Materials Division of Suzhou Laboratory. His research interest includes 2D semiconductor materials growth, device technology, and integrate circuits. He has already published more than 170 papers in peer reviewed journals and conferences (including 2 in Nature and 2 in Science), and these papers have accumulated more than 26,000 citations. He has been recognized by a number of awards and honors, such as Xplorer Prize, Clarivate Highly Cited Researcher, Huang Kun Prize in Solid-state Physics and Semiconductor Physics, second prize of National Natural Science Award, and Chinese Youth Metal.