High-speed InGaN light-emitting devices for visible light communications

Lai Wang

Tsinghua University, China

New communication scenarios such as LIFI, in-vehicle plastic optic fiber communication, and inter-chip interconnection have put forward demands for high-speed blue and green light sources. This presentation will introduce the work of our team on achieving high-speed Micro-LEDs and laser diodes with a -3dB modulation bandwidth up to GHz level based on improved InGaN active region epitaxy.

Biography: Wang Lai received his bachelor's degree and doctor's degree respectively, both in the Department of Electronic Engineering of Tsinghua University in 2003 and 2008, respectively. His research interests include optoelectronic materials and devices based on wide-gap semiconductors, Micro-LEDs for display and communication, blue and green laser diodes, and in-sensor computing devices. He has published more than 150 SCI papers. He serves as an oversea editorial board member of Applied Physics Express. In 2011, he won the second prize of National Science and Technology Progress Award. In 2022, he was supported by the National Science Fund for Distinguished Young Scholars.